PART |
Description |
Maker |
APT5014LVR |
POWER MOS V 500V 37A 0.140 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT1001R1AVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs POWER MOS V 1000V 9A 1.100 Ohm
|
Advanced Power Technolo... ADPOW[Advanced Power Technology]
|
APT12040L2LL |
POWER MOS 7 1200V 30A 0.400 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
Advanced Power Technology Ltd.
|
APT5017BLC APT5017SLC APT10086BLC APT10086SLC |
POWER MOS VI 500V 30A 0.170 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT10090BFLL APT10090SFLL |
POWER MOS 7 1000V 12A 0.900 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technolo... Advanced Power Technology Ltd.
|
APT10050LLC APT10050B2LC |
POWER MOS VI 1000V 21A 0.500 Ohm Power MOS VITM is a new generation of low gate charge, high voltage
|
Advanced Power Technology Ltd.
|
APT10078BLL APT10078SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 POWER MOS 7 1000V 14A 0.780 Ohm
|
Advanced Power Technology, Ltd. Advanced Power Technology Ltd.
|
APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS V 1000V 21A 0.500 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
PT368 PT3610 |
DIODE MODULE 30A/800V/1000V
|
NIEC[Nihon Inter Electronics Corporation]
|
RURP30100 FN2877 |
From old datasheet system 30A, 1000V Ultrafast Diode
|
INTERSIL[Intersil Corporation]
|